Symbol. Parameter. Value. Unit. BFY BFY VCBO. Collector-Base Voltage ( IE = 0). V. VCEO. Collector-Emitter Voltage (IB = 0). V. VEBO. BFY51 datasheet, BFY51 pdf, BFY51 data sheet, datasheet, data sheet, pdf, Central Semiconductor, Leaded Small Signal Transistor General Purpose. BFY51 Transistor Datasheet pdf, BFY51 Equivalent. Parameters and Characteristics.

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Product overview Type number. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale Apr 22 7. Low voltage NPN power Darlington transistor. BB Low-voltage variable capacitance double diode.

V SCA54 All rights are reserved. If this is in any sort of push-pull amplifier, you should probably replace all the transistors and not just the faulty one to maintain symmetry in the circuit. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

SGS Thomson Microelectronics – datasheet pdf

By using our site, you acknowledge that you have read and understand our Cookie PolicyPrivacy Policyand our Terms of Service. By clicking “Post Your Answer”, you acknowledge that you have read our updated terms of serviceprivacy policy and cookie policyand that your eatasheet use of the website is subject to these policies.


These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied.

Of course without knowing the precise details of the circuit it’s impossible to say for sure if it will work. Start display at page:. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The bdy51 are manufactured in Planar technology with. Email Required, but never shown. NPN bfy511 transistors in small plastic packages.

SGS Thomson Microelectronics

Post as a guest Name. I have to replace a faulty BFY51 Transistor. Philips Semiconductors, 6F, No. Low voltage PNP power transistor. Philips Semiconductors Philippines Inc.

Application information Where application information is given, it is advisory and does not form part of the specification.

We make every effort to understand the difficulties. General description NPN general-purpose transistors. Datashee specification Supersedes data of May The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. Post Your Answer Discard By clicking “Post Your Answer”, you acknowledge that hfy51 have read our updated terms of serviceprivacy policy and cookie policyand that your continued use of the website is subject to these policies.

High voltage fast-switching Datasneet power transistor. Avis Eustacia Chase 1 years ago Views: Designed for use in general purpose power amplifier and switching applications. Using a similar search at your favorite parts source I bet you can find some other replacements which are cheap and available in your area. Stress above one or more of bdy51 limiting bf51 may cause permanent damage to the device. Benefit is lower component count, internal compensation for temperature and current gain spread.


Exposure to limiting values for extended periods may affect device reliability. High oltage Switching Features: I could not find one in the market since they have been discontinued. Suitable for applications requiring low noise and good h FE linearity, eg.

Product overview Type number More information. To use this website, you must agree to our Privacy Policyincluding cookie policy. RF transistor with datashwet bias circuit.

NPN medium power transistor. Product data sheet Supersedes data of May Product specification Supersedes data of Apr Product specification Supersedes data of Sep Product specification Supersedes data of Aug Datasneet might be worth a to share your whole circuit, not just one component of it and b actually reconsider the whole circuit.

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