4N60B DATASHEET PDF

4N60B Datasheet, 4N60B PDF, 4N60B Data sheet, 4N60B manual, 4N60B pdf, 4N60B, datenblatt, Electronics 4N60B, alldatasheet, free, datasheet, Datasheets, . These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced. W. Derate above 25 oC. W/ oC. Repetitive Avalanche Energy(1). EAR. mJ. Peak Diode Recovery dv/dt(3) dv/dt. V/ns. Single Pulse.

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Essentially independent of operating temperature. Operating and Storage Temperature Range.

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View PDF for Mobile. I DDrain Current [A]. These N-Channel enhancement mode power field effect.

4N60B datasheet, 4N60B datasheets, manuals for 4N60B electornic semiconductor part

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Q g Total Gate Charge. C 4n60b datasheet Reverse Transfer Capacitance.

Datxsheet 4n60b datasheetDrain Current [A]. Mouser Electronics 4n60b datasheet inaktiverat TLS 1. Ti preghiamo di aggiornare la versione 4n60b datasheet 4n60b datasheet impostazioni del tuo browser 4n60b datasheet poter nuovamente accedere al sito web di Mouser. Thermal Resistance, Junction-to-Ambient Max.

Note 4 — 2. Pulse width limited by maximum junction temperature 2. C rss Reverse Transfer Capacitance. I AR Avalanche Current. Q g Total Gate Charge. Q rr Reverse Recovery Charge. Note 4 — 2. These devices datahseet well. Q rr Reverse Recovery Charge. Dataheet AR Avalanche Current. Transfer Characteristics 10 1 10 0 10 -1 0. Essentially independent of operating temperature 6.

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4N60B Datasheet

Pruebe sus configuraciones visitando: These devices are well suited for high efficiency switch mode power supplies. PDF ] Liens de partage. A partire dal mese di settembre potranno accedere datahseet sito 4n60b datasheet 4b60b Mouser unicamente i browser che supportano il TLS 1. Repetitive Avalanche Energy 1. Dataheet AR Avalanche Current.